Patent · US Active

Semiconductor device and method of fabricating a semiconductor device

US11342451B2 · kind B2 · utility

0Cited by

2References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

John Twynam · Regensburg, DE
Albert Birner · Regensburg, DE
Helmut Brech · Lappersdorf, DE

Key dates

Filing date	Nov 27, 2019
Grant date	May 24, 2022
Priority date	—
Expiry date	Nov 27, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/83
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a support substrate having a first surface capable of supporting the epitaxial growth of at least one III-V semiconductor and a second surface opposing the first surface, at least one mesa positioned on the first surface, each mesa including an epitaxial III-V semiconductor-based multi-layer structure on the first surface of the support substrate, the III-V semiconductor-based multi-layer structure forming a boundary with the first surface and a parasitic channel suppression region positioned laterally adjacent the boundary.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.