Plasma processing apparatus having a focus ring adjustment assembly

US11348767B2 · kind B2 · utility

Assignees

• Beijing E-Town Semiconductor Technology Co., Ltd. · CN
• Mattson Technology, Inc. · US

Inventors

• Martin L. Zucker · Orinda, US
• Peter J. Lembesis · Ramona, US
• Ryan Pakulski · Discovery Bay, US
• Shawming Ma · Sunnyvale, US

Key dates

• Filing date: May 13, 2020
• Grant date: May 31, 2022
• Expiry date: Oct 22, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67742
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber defining a vertical direction and a lateral direction. The plasma processing apparatus includes a pedestal disposed within the processing chamber. The pedestal is configured to support the substrate. The plasma processing apparatus includes a radio frequency (RF) disposed within the processing chamber. The RF bias electrode defines a RF zone extending between a first end of the RF bias electrode and a second end of the RF bias electrode along the lateral direction. The plasma processing apparatus includes a focus ring disposed within the processing chamber. The plasma processing apparatus further includes a focus ring adjustment assembly. The focus ring adjustment assembly includes a lift pin positioned outside of the RF zone. The lift pin is movable along the vertical direction to adjust a distance between the pedestal and the focus ring along the vertical direction.