Silicon mandrel etch after native oxide punch-through
US11387115B2 · kind B2 · utility
1Cited by
1References
10Claims
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Key dates
| Filing date | Dec 17, 2019 |
| Grant date | Jul 12, 2022 |
| Priority date | — |
| Expiry date | Dec 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatus, systems, and methods for conducting a silicon containing material removal process on a workpiece are provided. In one example implementation, the method can include generating species from a process gas in a first chamber using an inductive coupling element. The method can include introducing a fluorine containing gas with the species to create a mixture. The mixture can include exposing a silicon structure of the workpiece to the mixture to remove at least a portion of the silicon structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.