Ultra-precise tuning of analog neural memory cells in a deep learning artificial neural network
US11393535B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2020 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Oct 21, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments for ultra-precise tuning of a selected memory cell are disclosed. The selected memory cell optionally is first programmed using coarse programming and fine programming methods. The selected memory cell then undergoes ultra-precise programming through the programming of an adjacent memory cell. As the adjacent memory cell is programmed, capacitive coupling between the floating gate of the adjacent memory cell and the floating gate of the selected memory cell will cause the voltage of the floating gate of the selected memory cell to increase, but in smaller increments than could be achieved by programming the selected memory cell directly. In this manner, the selected memory cell can be programmed with ultra-precise gradations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.