Selective tungsten deposition at low temperatures

US11404313B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Yi Xu · Singapore, SG
• Yufei Hu · Fremont, US
• Yu Lei · Belmont, US
• Kazuya Daito · Milpitas, US
• Da He · Sunnyvale, US
• Jiajie Cen · San Jose, US

Key dates

• Filing date: Jun 30, 2020
• Grant date: Aug 2, 2022
• Expiry date: Sep 26, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53257
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.