Yi Xu
60Patents
15h-index
113Co-inventors
87Inventor score
Filing activity: Jul 2, 1999 → Mar 8, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6348407B1 | Method to improve adhesion of organic dielectrics in dual damascene interconnects | Electricity | 198 | Expired |
| US6436824B1 | Low dielectric constant materials for copper damascene | Electricity | 111 | Expired |
| US6265321A | Air bridge process for forming air gaps | Electricity | 78 | Expired |
| US6358842B1 | Method to form damascene interconnects with sidewall passivation to protect organic dielectrics | Electricity | 75 | Expired |
| US6124194A | Method of fabrication of anti-fuse integrated with dual damascene process | Electricity | 60 | Expired |
| US6331479A | Method to prevent degradation of low dielectric constant material in copper damascene interconnects | Electricity | 52 | Expired |
| US6165891A | Damascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layer | Electricity | 42 | Expired |
| US6117747A | Integration of MOM capacitor into dual damascene process | Electricity | 38 | Expired |
| US6352921B1 | Use of boron carbide as an etch-stop and barrier layer for copper dual damascene metallization | Electricity | 32 | Expired |
| US6350675B1 | Integration of silicon-rich material in the self-aligned via approach of dual damascene interconnects | Electricity | 31 | Expired |
| US6683002B1 | Method to create a copper diffusion deterrent interface | Electricity | 29 | Expired |
| US6378759B1 | Method of application of conductive cap-layer in flip-chip, COB, and micro metal bonding | Electricity | 25 | Expired |
| US6720204B2 | Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding | Electricity | 23 | Expired |
| US6207554A | Gap filling process in integrated circuits using low dielectric constant materials | Electricity | 21 | Expired |
| US6417088B1 | Method of application of displacement reaction to form a conductive cap layer for flip-chip, COB, and micro metal bonding | Electricity | 21 | Expired |
| US6475810B1 | Method of manufacturing embedded organic stop layer for dual damascene patterning | Electricity | 13 | Expired |
| US6627778B2 | Selective hydrogenation process for removing C10-C16 diolefins | Chemistry; Metallurgy | 12 | Expired |
| US6690091B1 | Damascene structure with reduced capacitance using a boron carbon nitride passivation layer, etch stop layer, and/or cap layer | Electricity | 11 | Expired |
| US6429117B1 | Method to create copper traps by modifying treatment on the dielectrics surface | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6350689B1 | Method to remove copper contamination by using downstream oxygen and chelating agent plasma | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6705512B2 | Method of application of conductive cap-layer in flip-chip, cob, and micro metal bonding | Electricity | 6 | Expired |
| US6415973B1 | Method of application of copper solution in flip-chip, COB, and micrometal bonding | Electricity | 5 | Expired |
| US6309982A | Method for minimizing copper diffusion by doping an inorganic dielectric layer with a reducing agent | Electricity | 4 | Expired |
| US6569770B2 | Method for improving oxide erosion of tungsten CMP operations | Electricity | 4 | Expired |
| US6159759A | Method to form liquid crystal displays using a triple damascene technique | Physics | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.