Bonded assembly formed by hybrid wafer bonding using selectively deposited metal liners
US11424215B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2020 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Nov 10, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nucleation suppression layer including a self-assembly material can be formed on a surface of a bonding dielectric layer without depositing the self-assembly material on physically exposed surfaces of first metal bonding pads of a first semiconductor die. Metallic liners including a second metal can be formed on the physically exposed surfaces of the metal bonding pads without depositing the second metal on the nucleation suppression layer. The first semiconductor die is bonded to a second semiconductor die by inducing metal-to-metal bonding between mating pairs of the first metal bonding pads and second metal bonding pads of the second semiconductor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.