Voltage bin calibration based on a temporary voltage shift offset
US11437108B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2021 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | Apr 14, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/4402
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A difference between a current temperature and a prior temperature of a memory device is determined. In response to a determination that the difference between the current temperature and the prior temperature of the memory device satisfies a temperature criterion, an amount of voltage shift is measured for a set of memory cells of a block family associated with a first voltage bin of a set of voltage bins at the memory device. The first voltage bin is associated with a first voltage offset. An adjusted amount of voltage shift is determined for the set of memory cells based on the determined amount of voltage shift and a temporary voltage shift offset associated with the difference between the current temperature and the prior temperature for the memory device. In response to a determination that the adjusted amount of voltage shift satisfies a voltage shift criterion, the block family is associated with a second voltage bin of the set of voltage bins. The second voltage bin is associated with a second voltage offset.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.