Methods for variable etch depths
US11456205B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2020 |
| Grant date | Sep 27, 2022 |
| Priority date | — |
| Expiry date | Apr 27, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0005
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods of producing grating materials with variable height fins are provided. In one example, a method may include providing a mask layer atop a substrate, the mask layer including a first opening over a first processing area and a second opening over a second processing area. The method may further include etching the substrate to recess the first and second processing areas, forming a grating material over the substrate, and etching the grating material in the first and second processing areas to form a plurality of structures oriented at a non-zero angle with respect to a vertical extending from a top surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.