Processing of workpieces using deposition process and etch process
US11462413B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Jul 16, 2020 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Jul 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3327
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatus, systems, and methods for conducting an etch removal process on a workpiece are provided. The method can include generating a plasma from a deposition process gas in a plasma chamber using a plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method can include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method can include removing silicon nitride layers at a faster etch rate than silicon dioxide layers on the high aspect ratio structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.