Method for particle removal from wafers through plasma modification in pulsed PVD
US11473189B2 · kind B2 · utility
1Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2020 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Feb 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.