Vertical transistor having an oxygen-blocking top spacer

US11476346B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Chen Zhang · Guilderland, US
• Christopher J. Waskiewicz · Rexford, US
• Shahab Siddiqui · Clifton Park, US
• Ruilong Xie · Niskayuna, US

Key dates

• Filing date: Jun 24, 2020
• Grant date: Oct 18, 2022
• Expiry date: Jul 9, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

Embodiments of the invention are directed to a method of forming a semiconductor device. A non-limiting example of the method includes forming a top spacer trench adjacent to an upper region of the channel fin. An oxygen-blocking layer is deposited within the top spacer trench and over the upper region of the channel fin. A top spacer is formed within the top spacer trench and over a portion of the oxygen-blocking layer that is within the top spacer trench. The oxygen-blocking layer includes an oxygen gettering material.