Joint opening structures of three-dimensional memory devices and methods for forming the same

US11482532B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Zhenyu Lu · Hubei, CN
• Wenguang Shi · Milpitas, US
• Guanping Wu · Hubei, CN
• Feng Pan · Kunshan, CN
• Xianjin Wan · 红钢城街道, CN
• Baoyou Chen · 红钢城街道, CN

Key dates

• Filing date: Nov 18, 2020
• Grant date: Oct 25, 2022
• Expiry date: Jan 1, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/35

Abstract

Joint opening structures of 3D memory devices and fabricating method are provided. A joint opening structure comprises a first through hole penetrating a first stacked layer and a first insulating connection layer, a first channel structure at the bottom of the first through hole, a first functional layer on the sidewall of the first through hole, a second channel structure on the sidewall of the first functional layer, a third channel structure over the first through hole, a second stacked layer on the third channel structure, a second insulating connection layer on the second stacked layer, a second through hole penetrating the second stacked layer and the second insulating connection layer, a second functional layer disposed on the sidewall of the second through hole, a fourth channel structure on the sidewall of the second functional layer, and a fifth channel structure over the second through hole.