Inventor · 红钢城街道, CN

Baoyou Chen

16Patents

3h-index

23Co-inventors

52Inventor score

Filing activity: Jul 26, 2018 → Dec 8, 2023

Most-cited inventions

Patent	Title	Area	Cited by	Status
US10553604B2	Through array contact structure of three-dimensional memory device	Electricity	21	Active
US10804283B2	Openings layout of three-dimensional memory device	Electricity	8	Active
US10910397B2	Through array contact structure of three- dimensional memory device	Electricity	5	Active
US11785776B2	Through array contact structure of three-dimensional memory device	Electricity	3	Active
US11574919B2	Openings layout of three-dimensional memory device	Electricity	2	Active
US10790295B2	Staircase formation in three-dimensional memory device	Electricity	2	Active
US10790297B2	Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layer	Electricity	1	Active
US11903195B2	Openings layout of three-dimensional memory device	Electricity	1	Active
US10886291B2	Joint opening structures of three-dimensional memory devices and methods for forming the same	Electricity	1	Active
US11545505B2	Through array contact structure of three-dimensional memory device	Electricity	1	Active
US10847532B2	Joint opening structures of three-dimensional memory devices and methods for forming the same	General	0	Revoked
US11482532B2	Joint opening structures of three-dimensional memory devices and methods for forming the same	Electricity	0	Active
US12356616B2	Openings layout of three-dimensional memory device	Electricity	0	Active
US11997851B2	Staircase formation in three-dimensional memory device	Electricity	0	Active
US12185550B2	Through array contact structure of three-dimensional memory device	Electricity	0	Active
US11956953B2	Joint opening structures of three-dimensional memory devices and methods for forming the same	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.