Asymmetric injection for better wafer uniformity

US11486038B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Eric Kihara Shono · San Mateo, US
• Vishwas Kumar Pandey · Savanuru, IN
• Christopher S. Olsen · Fremont, US
• Kartik Shah · Saratoga, US
• Hansel LO · San Jose, US
• Tobin Kaufman-Osborn · Sunnyvale, US
• Rene George · San Jose, US
• Lara Hawrylchak · Gilroy, US
• Erika HANSEN · Campbell, US

Key dates

• Filing date: Jan 29, 2020
• Grant date: Nov 1, 2022
• Expiry date: Sep 27, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67115
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.