Patent · US Active

Fully aligned via for interconnect

US11495538B2 · kind B2 · utility

1Cited by
7References
14Claims
0Family size

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Inventors

Key dates

Filing dateJul 18, 2020
Grant dateNov 8, 2022
Priority date
Expiry dateJul 18, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L23/53257
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A fully aligned via interconnect structure and techniques for formation thereof using subtractive metal patterning are provided. In one aspect, an interconnect structure includes: metal lines Mx−1; metal lines Mx disposed over the metal lines Mx−1; and at least one via Vx−1 fully aligned between the metal lines Mx−1 and the metal lines Mx, wherein a top surface of at least one of the metal lines Mx−1 has a stepped profile. In another aspect, another interconnect structure includes: metal lines Mx−1; metal lines Mx disposed over the metal lines Mx−1; at least one via Vx−1 fully aligned between the metal lines Mx−1 and the metal lines Mx; and sidewall spacers alongside the metal lines Mx. A method of forming an interconnect structure is also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.