Integrated epitaxial metal electrodes

US11495670B2 · kind B2 · utility

Assignee

• IQE plc · GB

Inventors

• Rodney Pelzel · Emmaus, US
• Andrew Clark · Shrewsbury, US
• Rytis Dargis · Greensboro, US
• Michael S. Lebby · Apache Junction, US
• Richard Hammond · Harriseahead, GB

Key dates

• Filing date: Jan 25, 2019
• Grant date: Nov 8, 2022
• Expiry date: May 12, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/814
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer. Specifically, the substrate may include a porous portion, which is usually aligned with the metal layer, with or without a rare earth oxide layer in between.