Patent · US Active

Method for producing at least one device in compressive strained semiconductor

US11515148B2 · kind B2 · utility

0Cited by

0References

10Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Loic Gaben · Albi, FR
Cyrille Le Royer · Grenoble, FR
Fabrice Nemouchi · Moirans, FR
Nicolas Posseme · Grenoble, FR
Shay Reboh · Grenoble, FR

Key dates

Filing date	Jun 29, 2020
Grant date	Nov 29, 2022
Priority date	—
Expiry date	Sep 5, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76283
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Method for producing a semiconductor device, including:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.