Integrated cleaning process for substrate etching
US11521838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2018 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | Dec 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. A substrate may be electrostatically secured to an electrostatic chuck within a chamber of an etch reactor. A first plasma may be provided into the chamber to etch the substrate, causing an etchant byproduct to be generated. After the etching is complete, a second plasma may be provided into the chamber, wherein the second plasma is an oxygen containing plasma. The etchant byproduct may be removed and the first substrate may be discharged using the second plasma. The first substrate may be removed from the chamber and a second substrate may be inserted into the chamber without first performing an in-situ cleaning between the removal of the first substrate and the insertion of the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.