Patent · US Active

Magnetic tunnel junctions with protection layers

US11522126B2 · kind B2 · utility

0Cited by

23References

18Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Lin Xue · San Diego, US
Jaesoo Ahn · San Jose, US
Sahil Patel · Fremont, US
Chando Park · San Diego, US
Mahendra Pakala · San Jose, US

Key dates

Filing date	Oct 14, 2019
Grant date	Dec 6, 2022
Priority date	—
Expiry date	Oct 14, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/85
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A film stack for a magnetic tunnel comprises a substrate, a magnetic reference layer disposed over the substrate, and a tunnel barrier layer disposed over the magnetic reference layer. The film stack further comprises a magnetic storage layer disposed over the tunnel barrier layer, and a capping layer disposed over the magnetic storage layer. Further, the film stack comprises at least one protection layer disposed between the magnetic reference layer and the tunnel barrier layer and disposed between the magnetic storage layer and the capping layer. Additionally, a material forming the at least one protection layer differs from at least one of a material forming the magnetic reference layer and a material forming the magnetic storage layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.