Patent · US Active

Plasma parameters and skew characterization by high speed imaging

US11545376B2 · kind B2 · utility

0Cited by
8References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 28, 2020
Grant dateJan 3, 2023
Priority date
Expiry dateFeb 3, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/334
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.