Methods of reducing chamber residues

US11560623B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Liangfa Hu · Newark, US
• Prashant Kumar Kulshreshtha · San Jose, US
• Anjana M. Patel · San Jose, US
• Abdul Aziz Khaja · San Jose, US
• Viren Kalsekar · Sunnyvale, US
• Vinay Prabhakar · Cupertino, US
• Satya THOKACHICHU · San Jose, US
• Byung Seok KWON · San Jose, US
• Ratsamee Limdulpaiboon · San Jose, US
• Kwangduk Douglas Lee · Redwood City, US
• Ganesh Balasubramanian · Sunnyvale, US

Key dates

• Filing date: Apr 24, 2020
• Grant date: Jan 24, 2023
• Expiry date: Sep 5, 2040

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/52
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.