Patent · US Active

Selective thermal annealing method

US11581418B2 · kind B2 · utility

0Cited by

1References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albert Birner · Regensburg, DE
Rudolf Berger · Munich, DE
Helmut Brech · Lappersdorf, DE
Olaf Storbeck · Dresden, DE
Haifeng Sun · Beijing, CN
John Twynam · Regensburg, DE

Key dates

Filing date	Jun 5, 2020
Grant date	Feb 14, 2023
Priority date	—
Expiry date	Jun 5, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/343
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor body having a base carrier portion and a type III-nitride semiconductor portion is provided. The type III-nitride semiconductor portion includes a heterojunction and two-dimensional charge carrier gas. One or more ohmic contacts are formed in the type III-nitride semiconductor portion, the ohmic contacts forming an ohmic connection with the two-dimensional charge carrier gas. A gate structure is configured to control a conductive state of the two-dimensional charge carrier gas. Forming the one or more ohmic contacts comprises forming a structured laser-reflective mask on the upper surface of the type III-nitride semiconductor portion, implanting dopant atoms into the upper surface of the type III-nitride semiconductor portion, and performing a laser thermal anneal that activates the implanted dopant atoms.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.