Top buffer layer for magnetic tunnel junction application
US11621393B2 · kind B2 · utility
0Cited by
6References
18Claims
0Family size
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Key dates
| Filing date | Dec 4, 2020 |
| Grant date | Apr 4, 2023 |
| Priority date | — |
| Expiry date | Dec 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67766
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.