Ferroelectric device film stacks with texturing layer, and method of forming such
US11659714B1 · kind B1 · utility
24Cited by
12References
19Claims
0Family size
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Key dates
| Filing date | May 7, 2021 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | May 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
Abstract
Described are ferroelectric device film stacks which include a templating or texturing layer or material deposited below a ferroelectric layer, to enable a crystal lattice of the subsequently deposited ferroelectric layer to template off this templating layer and provide a large degree of preferential orientation despite the lack of epitaxial substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.