James David Clarkson
12Patents
2h-index
19Co-inventors
40Inventor score
Filing activity: May 7, 2021 → Aug 16, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11659714B1 | Ferroelectric device film stacks with texturing layer, and method of forming such | Electricity | 24 | Active |
| US11765908B1 | Memory device fabrication through wafer bonding | Electricity | 2 | Active |
| US11741428B1 | Iterative monetization of process development of non-linear polar material and devices | Physics | 1 | Active |
| US11716858B1 | Ferroelectric device film stacks with texturing layer which is part of a bottom electrode and a barrier, and method of forming such | Electricity | 0 | Active |
| US12147941B2 | Iterative monetization of precursor in process development of non-linear polar material and devices | Physics | 0 | Active |
| US12190946B1 | Read disturb mitigation for non-linear polar material based multi-capacitor bit-cell | Physics | 0 | Active |
| US12062584B1 | Iterative method of multilayer stack development for device applications | Electricity | 0 | Active |
| US12094511B1 | Write disturb mitigation for column multiplexed non-linear polar material based multi-capacitor bit-cell | Physics | 0 | Active |
| US11744081B1 | Ferroelectric device film stacks with texturing layer which is part of a bottom electrode, and method of forming such | Electricity | 0 | Active |
| US11832451B1 | High density ferroelectric random access memory (FeRAM) devices and methods of fabrication | Electricity | 0 | Active |
| US12274071B1 | Capacitor integrated with a transistor for logic and memory applications | Electricity | 0 | Active |
| US12262543B1 | High density ferroelectric random access memory (FeRAM) devices and methods of fabrication | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.