Thin-film-transistor based complementary metal-oxide-semiconductor (CMOS) circuit

US11659722B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Willy Rachmady · Beaverton, US
• Prashant Majhi · San Jose, US
• Ravi Pillarisetty · Portland, US
• Elijah V. Karpov · Portland, US
• Brian S. Doyle · Portland, US
• Anup Pancholi · Santa Clara, US
• Abhishek A. Sharma · Hillsboro, US

Key dates

• Filing date: Dec 19, 2018
• Grant date: May 23, 2023
• Expiry date: Sep 7, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K19/20

Abstract

Embodiments herein describe techniques for a semiconductor device including a semiconductor substrate, a first device of a first wafer, and a second device at back end of a second wafer, where the first device is bonded with the second device. A first metal electrode of the first device within a first dielectric layer is coupled to an n-type oxide TFT having a channel layer that includes an oxide semiconductor material. A second metal electrode of the second device within a second dielectric layer is coupled to p-type organic TFT having a channel layer that includes an organic material. The first dielectric layer is bonded to the second dielectric layer, and the first metal electrode is bonded to the second metal electrode. The n-type oxide TFT and the p-type organic TFT form a symmetrical pair of transistors of a CMOS circuit. Other embodiments may be described and/or claimed.