Patent · US Active

Chamber configurations and processes for particle control

US11670492B2 · kind B2 · utility

4Cited by
3References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 15, 2020
Grant dateJun 6, 2023
Priority date
Expiry dateJul 29, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/335
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.