Methods of improving graphene deposition for processes using microwave surface-wave plasma on dielectric materials

US11682556B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Jie Zhou · Hefei, CN
• Erica Chen · Cupertino, US
• Qiwei Liang · Fremont, US
• Chentsau Chris Ying · Cupertino, US
• Srinivas D. Nemani · Sunnyvale, US
• Ellie Yieh · San Jose, US

Key dates

• Filing date: Feb 15, 2022
• Grant date: Jun 20, 2023
• Expiry date: Feb 15, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02658
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming graphene layers is disclosed. A method of improving graphene deposition is also disclosed. Some methods are advantageously performed at lower temperatures. Some methods advantageously provide graphene layers with lower resistance. Some methods advantageously provide graphene layers in a relatively short period of time.