Transistor comprising a channel placed under shear strain and fabrication process

US11688811B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Emmanuel Augendre · Montbonnot-Saint-Martin, FR
• Maxime Argoud · Grenoble, FR
• Sylvain Maitrejean · Paris, FR
• Pierre Morin · Albany, US
• Raluca Tiron · Saint-Égrève, FR

Key dates

• Filing date: Dec 16, 2020
• Grant date: Jun 27, 2023
• Expiry date: Sep 24, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

A field-effect transistor including an active zone comprises a source, a channel, a drain and a control gate, which is positioned level with the channel, allowing a current to flow through the channel between the source and drain along an x-axis, the channel comprising: a first edge of separation with the source; and a second edge of separation with the drain; the channel being compressively or tensilely strained, wherein the channel includes a localized perforation or a set of localized perforations along at least the first and/or second edge of the channel so as to also create at least one shear strain in the channel. A process for fabricating the transistor is provided.