Read voltage calibration for copyback operation

US11694763B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Kishore Kumar Muchherla · Fremont, US
• Niccolo' Righetti · Boise, US
• Jeffrey S. McNeil · Nampa, US
• Akira Goda · Boise, US
• Todd A. Marquart · Boise, US
• Mark A. Helm · Boise, US
• Gil Golov · Backnang, DE
• Jeremy Binfet · Boise, US
• Carmine Miccoli · Boise, US
• Giuseppina Puzzilli · Boise, US

Key dates

• Filing date: Mar 21, 2022
• Grant date: Jul 4, 2023
• Expiry date: Mar 21, 2042

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C29/42
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A system includes a memory device having a plurality of groups of memory cells and a processing device communicatively coupled to the memory device. The processing device is be configured to read a first group of memory cells of the plurality to determine a calibrated read voltage associated with the group of memory cells. The processing device is further configured to determine, using the calibrated read voltage associated with the first group of memory cells, a bit error rate (BER) of a second group of memory cells of the plurality. Prior to causing the memory device to perform a copyback operation on the plurality of groups of memory cells, the processing device is further configured to determine whether to perform a subsequent read voltage calibration on at least the second group of the plurality based, at least partially, on a comparison between the determined BER and a threshold BER.