Treatment for high-temperature cleans
US11699577B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2021 |
| Grant date | Jul 11, 2023 |
| Priority date | — |
| Expiry date | Jun 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.