Overlay mark design for electron beam overlay

US11703767B2 · kind B2 · utility

Inventors

• Inna Steely-Tarshish · Haifa, IL
• Stefan Eyring · Weilburg, DE
• Mark Ghinovker · Migdal HaEmek, IL
• Yoel Feier · Haifa, IL
• Eitan Hajaj · Ashkelon, IL
• Ulrich Pohlmann · Jena, DE
• Nadav Gutman · Zichron Ya'akov, IL
• Chris Steely · Yoqneam Illit, IL
• Raviv Yohanan · Kiryat Motzkin, IL
• Ira Naot · Jerusalem, IL

Key dates

• Filing date: Sep 28, 2021
• Grant date: Jul 18, 2023
• Expiry date: Sep 28, 2041

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/70683
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.