Ferroelectric device film stacks with texturing layer which is part of a bottom electrode and a barrier, and method of forming such

US11716858B1 · kind B1 · utility

Assignee

• Kepler Computing Inc. · US

Inventors

• Niloy Mukherjee · Beaverton, US
• Ramamoorthy Ramesh · Moraga, US
• Sasikanth Manipatruni · Ithaca, US
• James David Clarkson · El Sobrante, US
• FNU Atiquzzaman · Berkeley, US
• Gabriel Antonio Paulius Velarde · San Leandro, US
• Jason Y. Wu · Albany, US

Key dates

• Filing date: May 7, 2021
• Grant date: Aug 1, 2023
• Expiry date: May 7, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/696

Abstract

Described are ferroelectric device film stacks which include a templating or texturing layer or material deposited below a ferroelectric layer, to enable a crystal lattice of the subsequently deposited ferroelectric layer to template off this templating layer and provide a large degree of preferential orientation despite the lack of epitaxial substrates.