Patent · US Active

Overlay design for electron beam and scatterometry overlay measurements

US11720031B2 · kind B2 · utility

0Cited by

18References

12Claims

0Family size

Assignee

KLA Corporation · US

Inventors

Inna Steely-Tarshish · Haifa, IL
Stefan Eyring · Weilburg, DE
Mark Ghinovker · Migdal HaEmek, IL
Yoel Feler · Haifa, IL
Eitan Hajaj · Ashkelon, IL
Ulrich Pohlmann · Jena, DE
Nadav Gutman · Zichron Ya'akov, IL
Chris Steely · Yoqneam Illit, IL
Raviv Yohanan · Kiryat Motzkin, IL
Ira Naot · Jerusalem, IL

Key dates

Filing date	Sep 28, 2021
Grant date	Aug 8, 2023
Priority date	—
Expiry date	Sep 28, 2041

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70683
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.