Methods for forming a semiconductor device

US11742215B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Alexander Breymesser · Villach, AT
• Bernhard Goller · Villach, AT
• Matthias Kuenle · Villach, AT
• Helmut Oefner · Zorneding, DE
• Francisco Javier Santos Rodriguez · Villach, AT
• Stephan Voss · Munich, DE

Key dates

• Filing date: Jul 28, 2021
• Grant date: Aug 29, 2023
• Expiry date: Sep 7, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/7806
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a semiconductor device, including forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate, increasing the porosity of the first semiconductor layer, first annealing the first semiconductor layer at a temperature of at least 1050° C., forming a second semiconductor layer on the first semiconductor layer and separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer.