Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor
US11757008B2 · kind B2 · utility
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27Claims
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Key dates
| Filing date | Feb 15, 2019 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Aug 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02502
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Layered structures described herein include electronic devices with 2-dimensional electron gas between polar-oriented cubic rare-earth oxide layers on a non-polar semiconductor. Layered structure includes a semiconductor device, comprising a III-N layer or rare-earth layer, a polar rare-earth oxide layer grown over the III-N layer or rare-earth layer, a gate terminal deposited or grown over the polar rare-earth oxide layer, a source terminal that is deposited or epitaxially grown over the layer, and a drain terminal that is deposited or grown over the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.