Methods for depositing tungsten or molybdenum films
US11761081B2 · kind B2 · utility
1Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2019 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Oct 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28568
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.