Semiconductor device including bonding pad metal layer structure

US11764176B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Evelyn Napetschnig · Diex, AT
• Jens Brandenburg · Munich, DE
• Christoffer Erbert · Duel, AT
• Joachim Hirschler · Villach, AT
• Oliver Humbel · Maria Elend, AT
• Thomas Rupp · Stormville, US
• Carsten Schaeffer · Annenheim, AT
• Julia Zischang · Villach, AT

Key dates

• Filing date: Aug 12, 2021
• Grant date: Sep 19, 2023
• Expiry date: Sep 2, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/13091
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device is proposed. The semiconductor device includes a wiring metal layer structure. The semiconductor device further includes a dielectric layer structure arranged directly on the wiring metal layer structure. The semiconductor device further includes a bonding pad metal layer structure arranged, at least partly, directly on the dielectric layer structure. A layer thickness of the dielectric layer structure ranges from 1% to 30% of a layer thickness of the wiring metal layer structure. The wiring metal layer structure and the bonding pad metal structure are electrically connected through openings in the dielectric layer structure.