Threshold voltage based on program/erase cycles
US11776629B2 · kind B2 · utility
0Cited by
7References
16Claims
0Family size
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Key dates
| Filing date | Aug 17, 2020 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | Nov 21, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method includes during a first portion of a service life of a memory device, programming at least one memory cell of the memory device to a first threshold voltage corresponding to a desired data state. The method can include during a second portion of the service life of the memory device subsequent to the first portion of the service life of the memory device, programming at least one memory cell of the memory device to a second threshold voltage corresponding to the desired data state. The second threshold voltage can be different than the first threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.