Methods and apparatus for low resistivity and stress tungsten gap fill
US11798845B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2020 |
| Grant date | Oct 24, 2023 |
| Priority date | — |
| Expiry date | Feb 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.