Lateral bipolar transistor

US11810969B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Haiting Wang · Clifton Park, US
• Alexander M. Derrickson · Troy, US
• Jagar Singh · Clifton Park, US
• Vibhor Jain · Williston, US
• Andreas Knorr · Saratoga Springs, US
• Alexander L. Martin · Saratoga Springs, US
• Judson R. Holt · Wappingers Falls, US
• Zhenyu Hu · Leonberg, DE

Key dates

• Filing date: Oct 25, 2021
• Grant date: Nov 7, 2023
• Expiry date: Dec 17, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/401

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. A structure includes: an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate; an extrinsic base vertically above the intrinsic base; a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and a raised emitter region on the semiconductor substate and laterally connected to the intrinsic base.