Methods for forming structures for MRAM applications

US11818959B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Hsin-wei Tseng · San Jose, US
• Chando Park · San Diego, US
• Jaesoo Ahn · San Jose, US
• Lin Xue · San Diego, US
• Mahendra Pakala · San Jose, US

Key dates

• Filing date: Jul 19, 2021
• Grant date: Nov 14, 2023
• Expiry date: Nov 10, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for hybrid (or called integrated) spin-orbit-torque magnetic spin-transfer-torque magnetic random access memory (SOT-STT MRAM) applications. In one embodiment, the method includes one or more magnetic tunnel junction structures disposed on a substrate, the magnetic tunnel junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a spin orbit torque (SOT) layer disposed on the magnetic tunnel junction structure, and a back end structure disposed on the spin orbit torque (SOT) layer.