Patent · US Active

Shutter disk

US11862480B2 · kind B2 · utility

0Cited by
4References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 11, 2021
Grant dateJan 2, 2024
Priority date
Expiry dateOct 11, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/741
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.