Overlay mark design for electron beam overlay

US11862524B2 · kind B2 · utility

Inventors

• Inna Steely-Tarshish · Haifa, IL
• Stefan Eyring · Weilburg, DE
• Mark Ghinovker · Migdal HaEmek, IL
• Yoel Feler · Haifa, IL
• Eitan Hajaj · Ashkelon, IL
• Ulrich Pohlmann · Jena, DE
• Nadav Gutman · Zichron Ya'akov, IL
• Chris Steely · Yoqneam Illit, IL
• Raviv Yohanan · Kiryat Motzkin, IL
• Ira Naot · Jerusalem, IL

Key dates

• Filing date: Sep 28, 2021
• Grant date: Jan 2, 2024
• Expiry date: Apr 7, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2223/54426
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.