Bonded assembly including inter-die via structures and methods for making the same
US11869877B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2021 |
| Grant date | Jan 9, 2024 |
| Priority date | — |
| Expiry date | Aug 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonded assembly includes a first semiconductor die and a second semiconductor die that are bonded to each other by dielectric-to-dielectric bonding. First conductive via structures vertically extend through the second semiconductor die and a respective subset of the first dielectric material layers in the first semiconductor die, and contact a respective first metal interconnect structure in the first semiconductor die. Second conductive via structures vertically extend through a second substrate and a respective subset of the second dielectric material layers in the second semiconductor die, and contacting a respective second metal interconnect structure in the second semiconductor die. Redistribution metal interconnect structures located over a backside surface of the second substrate electrically connect the first conductive via structures and the second conductive via structures, and provide electrical interconnection between the first semiconductor die and the second semiconductor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.