Semiconductor device and method of fabricating a semiconductor device

US11869963B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• John Twynam · Regensburg, DE
• Albert Birner · Regensburg, DE
• Helmut Brech · Lappersdorf, DE

Key dates

• Filing date: Apr 29, 2022
• Grant date: Jan 9, 2024
• Expiry date: Apr 29, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a support substrate having a first surface capable of supporting the epitaxial growth of at least one III-V semiconductor and a second surface opposing the first surface, at least one mesa positioned on the first surface, each mesa including an epitaxial III-V semiconductor-based multi-layer structure on the first surface of the support substrate, the III-V semiconductor-based multi-layer structure forming a boundary with the first surface and a parasitic channel suppression region positioned laterally adjacent the boundary.