Patent · US Active

Process chamber with reduced plasma arc

US11875969B2 · kind B2 · utility

0Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 23, 2020
Grant dateJan 16, 2024
Priority date
Expiry dateAug 22, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/3438
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A processing system comprises a chamber body, a substrate support and a lid assembly. The substrate support is located in the chamber body and comprises a first electrode. The lid assembly is positioned over the chamber body and defines a processing volume. The lid assembly comprises a faceplate, a second electrode positioned between the faceplate and the chamber body, and an insulating member positioned between the second electrode and the processing volume. A power supply system is coupled to the first electrode and the faceplate and is configured to generate a plasma in the processing volume.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.