Neighbor bit line coupling enhanced gate-induced drain leakage erase for memory apparatus with on-pitch semi-circle drain side select gate technology
US11881266B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2022 |
| Grant date | Jan 23, 2024 |
| Priority date | — |
| Expiry date | Apr 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory apparatus and method of operation are provided. The memory apparatus includes memory cells connected to word lines and disposed in memory holes organized in rows grouped in strings. The memory cells are configured to retain a threshold voltage. The rows include full circle rows and semi-circle rows in which the memory holes are partially cut by a slit half etch. The memory holes of the semi-circle rows are coupled semi-circle bit lines and the memory holes of the full circle rows are coupled to full circle bit lines. A control means is configured to erase the memory cells in an erase operation. During the erase operation, the control means creates a capacitive coupling between each of the semi-circle bit lines and at least one neighboring one of the full circle bit lines to increase a semi-circle erase voltage applied to each of the semi-circle bit lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.