Integration scheme for three terminal spin-orbit-torque (SOT) switching devices
US11895928B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2019 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Feb 25, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A three terminal spin-orbit-torque (SOT) device is disclosed wherein a free layer (FL) with a switchable magnetization is formed on a Spin Hall Effect (SHE) layer comprising a Spin Hall Angle (SHA) material. The SHE layer has a first side contacting a first bottom electrode (BE) and an opposite side contacting a second BE where the first and second BE are separated by a dielectric spacer. A first current is applied between the two BE, and the SHE layer generates SOT on the FL thereby switching the FL magnetization to an opposite perpendicular-to-plane direction. The SHE layer is a positive or negative SHA material, and may be a topological insulator such as Bi2Sb3. A top electrode is formed on an uppermost hard mask in each SOT device. A single etch through the FL and SHE layer ensures a reliable first current pathway that is separate from a read current pathway.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.